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Type: 
Conference
Description: 
We have investigated the electrical activation of Fe implanted in InP in different concentrations and we have characterized by DLTS and by C-V analyses the electrical activity of the deep levels present in the band gap.
Publisher: 
IEEE
Publication date: 
8 May 2005
Authors: 

B Fraboni, A Gasparotto, T Cesca, A Verna, G Impellizzeri, F Priolo

Biblio References: 
Pages: 410-413
Origin: 
International Conference on Indium Phosphide and Related Materials, 2005