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In the last decade, silicon photonics has undergone an impressive development driven by an increasing number of technological applications. Plasmonics has not yet made its way to the microelectronic industry, mostly because of the lack of compatibility of typical plasmonic materials with foundry processes. In this framework, we have developed a plasmonic platform based on heavily n-doped Ge grown on silicon substrates. We developed growth protocols to reach n-doping levels exceeding 1020 cm-3, allowing us to tune the plasma wavelength of Ge in the 3-15 μm range. The plasmonic resonances of Ge-on-Si nanoantennas have been predicted by simulations, confirmed by experimental spectra and exploited for molecular sensing. Our work represents a benchmark for group-IV mid-IR plasmonics.
International Society for Optics and Photonics
Publication date: 
5 Mar 2021

Jacopo Frigerio, Leonetta Baldassarre, Giovanni Pellegrini, Marco P Fischer, Kevin Gallacher, Ross Millar, Andrea Ballabio, Daniele Brida, Giovanni Isella, Enrico Napolitani, Douglas J Paul, Michele Ortolani, Paolo Biagioni

Biblio References: 
Volume: 11691 Pages: 116910M
Silicon Photonics XVI